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| Power Transistors 2SD2466, 2SD2466A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1604 Unit: mm s Features q q q (TC=25C) Ratings 40 50 20 40 5 20 10 40 2 150 -55 to +150 Unit V Parameter Collector to base voltage Collector to 2SD2466 2SD2466A 2SD2466 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 4.10.2 8.00.2 Solder Dip s Absolute Maximum Ratings 15.00.3 3.00.2 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw 4.60.2 3.20.1 9.90.3 2.90.2 13.7-0.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 emitter voltage 2SD2466A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V 7 A A W C C 1:Base 2:Collector 3:Emitter TO-220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2466 2SD2466A 2SD2466 2SD2466A (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT Cob ton tstg tf Conditions VCB = 40V, IE = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A IC = 10A, IB = 0.33A IC = 10A, IB = 0.33A VCE = 10V, IC = 0.5A, f = 10MHz VCB = 10V, IE = 0, f = 1MHz IC = 3A, IB1 = 0.1A, IB2 = - 0.1A, VCC = 20V 120 200 0.3 0.4 0.1 20 40 45 90 260 0.6 1.5 V V MHz pF s s s min typ max 50 50 50 Unit A A V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC -- Ta 80 10 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=2.0W) TC=25C IB=100mA 90mA 80mA 70mA 6 60mA 50mA 40mA 4 30mA 20mA 2 10 0 0 20 40 60 80 100 120 140 160 (2) (3) 0 0 1 2 3 4 5 6 10mA 2SD2466, 2SD2466A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) -- IC IC/IB=20 Collector power dissipation PC (W) 70 60 50 40 30 20 (1) Collector current IC (A) 8 3 TC=100C 1 25C 0.3 -25C 0.1 0.03 0.01 0.1 0.3 1 3 10 30 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) 10 IC/IB=20 1000 hFE -- IC 1000 VCE=10V fT -- IC VCE=10V f=10MHz TC=25C Forward current transfer ratio hFE 3 25C -25C TC=100C 300 TC=100C 100 25C -25C 30 Transition frequency fT (MHz) 3 10 30 300 100 30 10 3 1 0.3 0.1 0.01 0.03 1 0.3 0.1 10 0.03 3 0.01 0.1 0.3 1 3 10 30 1 0.1 0.3 1 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) ton, tstg, tf -- IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=30 (IB1=-IB2) VCC=20V TC=25C Area of safe operation (ASO) 100 30 ICP Non repetitive pulse TC=25C t=10ms 1ms Switching time ton,tstg,tf (s) Collector current IC (A) 10 3 1 0.3 0.1 0.03 0.01 0 1 2 10 3 1 0.3 0.1 0.03 0.01 IC DC ton tstg tf 3 4 5 1 3 10 30 2SD2466A 100 2SD2466 300 1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 103 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink 2SD2466, 2SD2466A Thermal resistance Rth(t) (C/W) 102 (1) 10 (2) 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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